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Samsung 990 EVO M.2 MZ-V9E1T0BW 1 TB

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Samsung MZ-V9E1T0BW
1 TB2 TB
Placement
internal
Size
1000 GB
Form factor
M.2
M.2 interface
PCI-E 5.0 2x / PCI-E 4.0 4x /
Controller
Samsung Piccolo
Memory type
3D TLC NAND / Samsung 133-Layer /
NVMe
Write speed
4200 MB/s
Read speed
5000 MB/s
MTBF
1.5 m h
Write IOPS
800 K
Read IOPS
620 K
TBW
600 TB
DWPD
0.3 times/day
Manufacturer's warranty
5 years
Data encryption
/ AES 256-bit, TCG/Opal V2.0 /
Size
22x80 mm
Official Website
semiconductor.samsung.com
Added to E-Catalog
January 2024
P/N
MZ-V9E1T0B/AM

MZ-V9E1T0BW

Operates in PCI-E 4.0 x4 or PCI-E 5.0 2x modes.
The information in the model description is for reference purposes.
Always clarify the specifications and configuration of the product with the online store manager before purchasing.
Catalog Samsung 2025 - new arrivals, bestsellers, and the most relevant models Samsung.

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