Samsung 9100 PRO MZ-VAP4T0CW 4 TB with radiator
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The information in the model description is for reference purposes.
Always clarify the specifications and configuration of the product with the online store manager before purchasing.
Always clarify the specifications and configuration of the product with the online store manager before purchasing.
TLC, QLC, MLC, SLC: which type of drive memory is better?Important differences between the types of NAND memory TLC, QLC, MLC, SLC, which determine the scope of their use and development prospects
How to choose the right SSD?Choosing an SSD with the required speed and good reliability for home, work and gaming
Buy Samsung 9100 PRO MZ-VAP4T0CW 4 TB with radiator
All prices 14 →SSD диск Samsung 9100 Pro with Heatsink 4TB M.2 (MZ-VAP4T0CW) MZ-VAP4T0CW | 25 999 ₴ |  | |||
Ssd накопичувач Samsung 9100 Pro 4 TB with Heatsink (MZ-VAP4T0CW) MZ-VAP4T0CW | 25 334 ₴ |  | |||
Накопичувач SSD M.2 2280 4TB 9100 PRO Heatsink Samsung (MZ-VAP4T0CW) MZ-VAP4T0CW | 28 286 ₴ |  | |||
SSD-накопичувач Samsung 9100 Pro with Heatsink 2280 PCIe 5.0 x4 NVMe 2.0 4TB (MZ-VAP4T0CW) MZ-VAP4T0CW | 28 286 ₴ |  | |||
| 24 399 ₴ |  | ||||
9 more offer(s)
Series Samsung PRO (top-end/TLC memory)Compare using chart →
1000 GB, M.2, 22x80, PCI-E 4.0 4x, 3D TLC NAND, write: 6900 MB/s, read: 7450 MB/s, DRAM buffer, warranty 5 years
2000 GB, M.2, 22x80, PCI-E 4.0 4x, 3D TLC NAND, write: 6900 MB/s, read: 7450 MB/s, DRAM buffer, warranty 5 years
4000 GB, M.2, 22x80, PCI-E 4.0 4x, 3D TLC NAND, write: 6900 MB/s, read: 7450 MB/s, DRAM buffer, warranty 5 years
2000 GB, M.2, 22x80, PCI-E 4.0 4x, 3D TLC NAND, write: 6900 MB/s, read: 7450 MB/s, DRAM buffer, warranty 5 years
1000 GB, M.2, 22x80, PCI-E 5.0 4x, 3D TLC NAND, write: 13300 MB/s, read: 14700 MB/s, DRAM buffer, warranty 5 years
1000 GB, M.2, 22x80, PCI-E 4.0 4x, 3D TLC NAND, write: 6900 MB/s, read: 7450 MB/s, DRAM buffer, warranty 5 years
2000 GB, M.2, 22x80, PCI-E 5.0 4x, 3D TLC NAND, write: 13400 MB/s, read: 14700 MB/s, DRAM buffer, warranty 5 years
2000 GB, M.2, 22x80, PCI-E 4.0 4x, 3D TLC NAND, write: 5100 MB/s, read: 7000 MB/s, DRAM buffer, warranty 5 years
4000 GB, M.2, 22x80, PCI-E 5.0 4x, 3D TLC NAND, write: 13400 MB/s, read: 14800 MB/s, DRAM buffer, warranty 5 years
1000 GB, M.2, 22x80, PCI-E 4.0 4x, 3D TLC NAND, write: 5000 MB/s, read: 7000 MB/s, DRAM buffer, warranty 5 years
4000 GB, M.2, 22x80, PCI-E 4.0 4x, 3D TLC NAND, write: 6900 MB/s, read: 7450 MB/s, DRAM buffer, warranty 5 years
2000 GB, M.2, 22x80, PCI-E 4.0 4x, 3D TLC NAND, write: 6900 MB/s, read: 7450 MB/s, DRAM buffer, warranty 5 years
500 GB, M.2, 22x80, PCI-E 4.0 4x, 3D TLC NAND, write: 5000 MB/s, read: 6900 MB/s, DRAM buffer, warranty 5 years
1000 GB, M.2, 22x80, PCI-E 4.0 4x, 3D TLC NAND, write: 5000 MB/s, read: 7000 MB/s, DRAM buffer, warranty 5 years
2000 GB, M.2, 22x80, PCI-E 4.0 4x, 3D TLC NAND, write: 5100 MB/s, read: 7000 MB/s, DRAM buffer, warranty 5 years
250 GB, M.2, 22x80, PCI-E 4.0 4x, 3D TLC NAND, write: 2700 MB/s, read: 6400 MB/s, DRAM buffer, warranty 5 years
4000 GB, M.2, 22x80, PCI-E 5.0 4x, 3D TLC NAND, write: 13400 MB/s, read: 14800 MB/s, DRAM buffer, warranty 5 years
1000 GB, M.2, 22x80, PCI-E 5.0 4x, 3D TLC NAND, write: 13300 MB/s, read: 14700 MB/s, DRAM buffer, warranty 5 years
2000 GB, M.2, 22x80, PCI-E 5.0 4x, 3D TLC NAND, write: 13400 MB/s, read: 14700 MB/s, DRAM buffer, warranty 5 years
Samsung 9100 PRO MZ-VAP4T0CW configurations
| Price for Samsung 9100 PRO MZ-VAP4T0CW | ||||
|---|---|---|---|---|
 | Samsung 9100 PRO MZ-VAP1T0 1 TB without radiator | from 7 970 ₴ | 35 offers | |
 | Samsung 9100 PRO MZ-VAP1T0CW 1 TB with radiator | from 8 684 ₴ | 13 offers | |
 | Samsung 9100 PRO MZ-VAP2T0 2 TB without radiator | from 12 241 ₴ | 45 offers | |
 | Samsung 9100 PRO MZ-VAP2T0CW 2 TB with radiator | from 13 010 ₴ | 14 offers | |
 | Samsung 9100 PRO MZ-VAP4T0 4 TB without radiator | from 19 999 ₴ | 46 offers | |
| Samsung 9100 PRO MZ-VAP4T0CW 4 TB with radiator | from 24 399 ₴ | 14 offers | |
We recommendCompare using chart →
4000 GB, M.2, 22x80, PCI-E 5.0 4x, 3D TLC NAND, write: 11800 MB/s, read: 12400 MB/s, warranty 5 years
4000 GB, M.2, 22x80, PCI-E 5.0 4x, 3D TLC NAND, write: 11800 MB/s, read: 12400 MB/s, DRAM buffer, warranty 5 years
4000 GB, M.2, 22x80, PCI-E 5.0 4x, 3D TLC NAND, write: 12600 MB/s, read: 14100 MB/s, DRAM buffer, warranty 5 years
4000 GB, M.2, 22x80, PCI-E 5.0 4x, 3D TLC NAND, write: 11000 MB/s, read: 12000 MB/s, DRAM buffer, warranty 5 years
4000 GB, M.2, 22x80, PCI-E 5.0 4x, 3D TLC NAND, write: 12600 MB/s, read: 14100 MB/s, DRAM buffer, warranty 5 years
4000 GB, M.2, 22x80, PCI-E 5.0 4x, 3D TLC NAND, write: 13400 MB/s, read: 14800 MB/s, DRAM buffer, warranty 5 years
4000 GB, M.2, 22x80, PCI-E 5.0 4x, 3D NAND, write: 13000 MB/s, read: 14000 MB/s, DRAM buffer, warranty 5 years
1000 - 8000 GB, M.2, 22x80, PCI-E 4.0 4x, 3D TLC NAND, 6300 / 6600 MB/s, IOPS 1100 / 1200 K, 7200 / 7300 MB/s, IOPS 800 / 1200 K
128 - 4000 GB, 2.5", 3D TLC NAND, 380 - 520 MB/s, IOPS 70 - 89 K, 530 / 560 MB/s, IOPS 35 - 90 K
